Factory Lead Time  

14 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

31A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

3.1W Ta 200W Tc

Turn Off Delay Time  

23 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5.5V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®

Published  

2000

Part Status  

Not For New Designs

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

82mOhm

Voltage - Rated DC  

200V

Terminal Form  

GULL WING

Current Rating  

31A

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

200W

Case Connection  

DRAIN

Turn On Delay Time  

13 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

82m Ω @ 18A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2370pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

107nC @ 10V

Rise Time  

38ns

Vgs (Max)  

±30V

Fall Time (Typ)  

10 ns

Continuous Drain Current (ID)  

31A

Threshold Voltage  

5.5V

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

200V

Dual Supply Voltage  

200V

Avalanche Energy Rating (Eas)  

420 mJ

Nominal Vgs  

5.5 V

Height  

4.826mm

Length  

10.668mm

Width  

9.65mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free